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近日,有两家公司同时发布了在芯片封装方面的革命性突破:一个是意法半导体宣布将硅通孔技术(TSV)引入MEMS芯片量产,在意法半导体的多片MEMS产品(如智能传感器、多轴惯性模块)内,硅通孔技术以垂直短线方式取代传统的芯片互连线方法(无需打线绑定),在尺寸更小的产品内实现更高的集成度和性能。另一个则是赛灵思宣布通过堆叠硅片互联(SSI)技术,将四个不同FPGA芯片在无源硅中介层上并排互联,结合TSV技术与微凸块工艺,构建了相当于容量达2000万门ASIC的可编程逻辑器件。虽然同样是基于TSV技术,前一种垂直堆叠业界称为3D封装;后一种互联堆叠称为2.5D封装。这两种不同
Recently, two companies also announced a revolutionary breakthrough in chip packaging at the same time: one is that STMicroelectronics has announced the introduction of TSV technology into MEMS chip production, multiple semiconductor products from STMicroelectronics such as smart sensors , Multi-Axis Inertial Module), TSV technology replaces the traditional chip interconnect approach with vertical dashing (without wire bonding), resulting in higher levels of integration and performance in smaller products. The other is Xilinx announced that through the stacked silicon interconnect (SSI) technology, four different FPGA chips side by side in the interposer of passive silicon, combined with TSV technology and micro-bump process to build the equivalent capacity of 2000 Wanmen ASIC programmable logic device. Although also based on TSV technology, the former vertical stack industry called 3D package; latter interconnect stack is called 2.5D package. These two are different