采用射频(RF)反应磁控溅射法,以氩气和氮气为反应气体,在不同的RF偏置功率下,在Si(100)和Si(111)衬底上制备了具有六方纤锌矿结构的AlN薄膜。使用扫描电子显微镜(SEM)表征了薄膜的截面形貌和厚度;利用原子力显微镜(AFM)和X射线衍射仪(XRD)研究了RF偏置功率对Si(111)和Si(100)衬底上沉积的AlN薄膜微观结构和表面粗糙度的影响。结果表明,在RF偏置功率为5~15 W时,两种衬底均可生长(002)择优取向AlN薄膜。RF偏置功率为20 W时,AlN薄膜(002)择优取向变弱,薄膜质量变差。当RF偏置功率为10 W时,Si(111)和Si(100)两种衬底沉积的AlN薄膜的半高宽(FWHM)值和表面均方根粗糙度均最小,其表面均方根粗糙度的最小值分别为2.427和2.836 nm。 The radio frequency (RF) reactive magnetron sputtering method was used to fabricate hexagonal wurtzite with Si (100) and Si (111) substrates under different RF bias powers using argon and nitrogen as reaction gases. Structure of the AlN film. The cross-sectional morphology and thickness of the films were characterized by scanning electron microscopy (SEM). The effects of RF bias power on Si (111) and Si (100) substrates were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) Effect of Deposition AlN Film Microstructure and Surface Roughness. The results show that (002) preferred orientation AlN thin films can be grown on both substrates at RF bias powers of 5-15 W. When RF bias power is 20 W, the preferential orientation of AlN thin film (002) becomes weaker and the quality of the thin film deteriorates. When the RF bias power is 10 W, the FWHM and the root mean square roughness of AlN thin films deposited on Si (111) and Si (100) substrates are the smallest, and the root mean square The minimum roughness is 2.427 and 2.836 nm, respectively.