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日前,Vishay Intertechnology,Inc.宣布,推出采用PowerPAK 1212-8封装的-40 V-SiS443DN和PowerPAK 1212-8S封装的—30 V-SiSS27DN器件,扩充其TrenchFET GenⅢP沟道功率MOSFET。Vishay SiliconixSiS443DN在-10 V和-4.5 V栅极驱动下具有业内较低的导通电阻,是首款40 V P沟道GenⅢ器件;SiSS27DN是首款采用PowerPAK 1212-8S封装的—30 V MOSFET。SiS443DN和SiSS27DN适用于24V、19 V和12 V负载开关,以及移动计算、智能手机和平板电脑中电源管理等各种应用的适配器和电池开关。这些器
Vishay Intertechnology, Inc. today announced the expansion of its TrenchFET Gen III P-Channel Power MOSFETs with the -30 V-SiSS27DN devices in the -40 V-SiS443DN and PowerPAK 1212-8S packages in the PowerPAK 1212-8 package. The Vishay Siliconix SiS443DN is the industry’s lowest on-resistance at -10 V and -4.5 V gate drives and is the first 40 V P-channel Gen III device; the SiSS27DN is the first -30 V MOSFET in a PowerPAK 1212-8S package. The SiS443DN and SiSS27DN are suitable for 24V, 19V and 12V load switches as well as adapters and battery switches for various applications in mobile computing, power management in smartphones and tablets. These devices