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A model of subthreshold characteristics for both undoped and doped double-gate(DG) MOSFETs has been proposed.The models were developed based on solution of 2-D Poisson’s equation using variable separation technique.Without any fitting parameters,our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length.Also,design parameters such as body thickness,gate oxide thickness and body doping concentrations can be directly reflected from our models.The models have been verified by comparing with device simulations’ results and found very good agreement.
A model of subthreshold characteristics for both undoped and doped double-gate (DG) MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson’s equation using variable separation technique. the degraded subthreshold characteristics due to nanoscale channel length. Also, design parameters such as body thickness, gate oxide thickness and body doping concentrations can be directly reflected from our models. The models have been verified by comparing with device simulations’ results and found very good agreement.