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采用三角势近似界面导带弯曲,研究了有限高势垒GaN/Ga1-x Al x N球形量子点中束缚极化子的结合能及其压力效应。数值计算了杂质态与声子之间相互作用对结合能的影响,同时与方形势垒进行了比较。结果表明,随着电子面密度的增加,导带弯曲效应增强,束缚极化子结合能逐渐下降。当电子面密度n s=(6.0,8.0)×1011/cm2且量子点半径R>10 nm时,束缚极化子的结合能趋近于一个相同且较小的值。结合能的极化效应主要来自杂质与光学声子相互作用的贡献。
The binding energy of the binding polaron in a GaN / Ga 1-x Al x N quantum dot with a finite high barrier and its pressure effect were investigated by using the conduction band bending at the approximate triangular interface. The influence of the interaction between impurity states and phonon on the binding energy is numerically calculated, and compared with the square barrier. The results show that with the increase of the electron density, the bending effect of the conduction band increases and the binding polaron bond energy decreases gradually. When the electron density n s = (6.0,8.0) × 1011 / cm2 and the quantum dot radius R> 10 nm, the binding polarities of the bound polarons tend to be the same and smaller. The polarization effect of binding energy mainly comes from the contribution of the interaction of impurities with optical phonons.