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提出了一种采用平面线性排列的3个圆形电子注代替平面带状电子注的W波段交错双栅行波放大器微型化慢波高频结构,并重点对其行波传输特性和输入输出耦合特性进行了仿真设计和参数优化.结果表明,这种平面微型化高频结构的行波传输色散特性良好且有很大的工作带宽,所产生的强轴向电场分布非常有利于电子注与高频场的能量交换和相互作用.在保证平面微型结构中圆形注通道直径和带状注通道高度相同的情况下,得到的耦合阻抗是带状注交错双栅慢波高频系统2~3倍,为行波放大器高效率的注波互作用和高功率输出提供了新的研究思路.为了与该交错双栅高频系统相匹配,提出了一种更为简单易行的输入与输出耦合结构,仅采用三周期渐变过渡段就可以实现反射系数S11在较宽频带内低于-20 d B的良好结果,更有利于行波放大器未来的工程实现与应用.
A miniaturized slow-wave high-frequency structure of W-band interleaved dual-gate traveling-wave amplifier with planar circular array of three circular electron implants instead of plane band electron injection is proposed. The characteristics of the traveling wave propagation and input-output coupling The simulation results show that this kind of planar miniaturized high-frequency structure has good traveling wave dispersion characteristics and a large working bandwidth. The strong axial electric field distribution generated by this planar micro-structure is very favorable for electron injection and high Frequency field energy exchange and interaction.In the case of ensuring that the diameter of the circular injection channel and the height of the ribbon injection channel in the planar microstructure are the same, the coupling impedance obtained is that of a band-shaped double-gate slow-wave high frequency system Which provides a new research idea for high efficient wave-wave interaction and high power output of traveling-wave amplifier.In order to match the interleaved dual-gate high-frequency system, a more simple and easy input-output coupling Structure, the transition coefficient of only three periods can achieve the reflection coefficient S11 in the wider band below -20 d B good results, more conducive to the future implementation of the traveling wave amplifier and application.