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为了研究低能Ar+离子束在不同入射角度下对单晶硅表面的刻蚀效果及光学性能,使用微波回旋共振离子源,对单晶Si(100)表面进行刻蚀,采用原子力显微镜、非接触式表面测量仪和傅里叶变换红外光谱仪对刻蚀后硅片的表面形貌、粗糙度和光学透过率进行了测量。实验结果表明:当离子束能量为1000 eV、束流密度为265μA.cm-2、刻蚀时间为30 min时,离子束入射角度从0°增加到30°,样品表面出现条纹状结构。入射角度在0°~15°,随着角度增加,样品表面粗糙度增加,条纹周期减小,光学透过率提高;而在15°~30°范围内,随着角度增加,粗糙度开始减小,条纹周期增大,同时光学透过率降低。继续增加入射角度,条纹状结构逐渐消失,入射角度到45°时,粗糙度和光学透过率达到最小值;增加入射角度到55°,样品表面出现自组织点状结构,表面粗糙度急剧增大,光学透过率随着角度增加开始增加;继续增加离子束入射角度到80°,表面粗糙度和光学透过率继续增加,样品表面呈现出均匀有序的自组织柱状结构;此后,随着入射角度的增加,表面粗糙度又开始减小,光学透过率降低。自组织条纹结构到柱状结构的转变是溅射粗糙化和表面驰豫机制相互作用的结果。
In order to study the etching effect and optical properties of low energy Ar + ion beam on single crystal silicon at different incident angles, the surface of single crystal Si (100) was etched by using microwave cyclotron resonance ion source. The atomic force microscopy, non-contact The surface morphology, roughness and optical transmittance of etched silicon wafers were measured by surface measuring instrument and Fourier transform infrared spectrometer. The experimental results show that when the ion beam energy is 1000 eV, the beam current density is 265μA.cm-2 and the etching time is 30 min, the incident angle of the ion beam increases from 0 ° to 30 °, and the stripe structure appears on the surface of the sample. The incident angle is between 0 ° and 15 °. With the increase of the angle, the surface roughness of the sample increases, the stripe period decreases and the optical transmittance increases. In the range of 15 ° ~ 30 °, the roughness decreases with decreasing angle Small, striped period increases, while optical transmittance decreases. When the incident angle is 45 °, the roughness and optical transmittance reach the minimum. When the incident angle is increased to 55 °, the self-organized point-like structure appears on the sample surface and the surface roughness increases sharply The optical transmission increases with the increase of angle. When the incident angle of the ion beam is further increased to 80 °, the surface roughness and optical transmission continue to increase, and the surface of the sample exhibits a uniform and orderly self-organized columnar structure. After that, As the incident angle increases, the surface roughness begins to decrease and the optical transmittance decreases. The transition from a self-organized stripe structure to a columnar structure is a result of the interaction between sputter roughening and surface relaxation mechanisms.