固态器件在电子对抗和雷达系统中继续发挥越来越大的作用。由于研究人员不断提高元件的性能,所以现在越来越多的军事应用可以得到可靠的和廉价的半导体器件。砷化镓场效应晶体管(GaAs FET)的噪声、功率和带宽等性能的继续改善,使得这种通用的晶体管成为今后各种各样的系统应用所选择的主要固态器件。要在10千兆赫以上的情况下产生C类功率,那么IMPATT二极管 Solid state devices continue to play an increasingly important role in electronic warfare and radar systems. As researchers continue to improve the performance of components, more and more military applications are now available reliable and cheap semiconductor devices. Continued improvements in performance such as noise, power, and bandwidth for gallium arsenide field-effect transistors (GaAs FETs) make this versatile transistor a major solid state device of choice for a wide variety of system applications in the future. To produce Class C power above 10 gigahertz, then the IMPATT diode