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描述了影响硅器件性能的二氧化硅中的缺陷,介绍了氧空位的概念,分析计算了随机氧空位对栅漏电流的影响。模拟结果表明:当氧空位在栅氧化层中随机变化时,引起的栅漏电流的变化是在一定值附近上下波动;栅漏电流随氧化层厚度的减小而增大,因此,在小尺寸器件中,必须考虑氧空位对栅漏电流的影响。但当厚度在特定值及特定电场下时,单个氧空位引起的栅漏电流增加可以忽略。
The defects in silicon dioxide that affect the performance of silicon devices are described. The concept of oxygen vacancies is introduced. The influence of random oxygen vacancies on gate leakage current is analyzed and calculated. The simulation results show that when the oxygen vacancies randomly change in the gate oxide layer, the gate-drain current fluctuation fluctuates around a certain value. The gate-drain current increases with the decrease of the oxide layer thickness. Therefore, In devices, the effect of oxygen vacancy on gate leakage must be considered. However, when the thickness is at a specific value and a specific electric field, the increase of the gate leakage current caused by a single oxygen vacancy can be neglected.