论文部分内容阅读
飞思卡尔半导体日前推出了全新的宽带射频功率放大器-新款Airfast AF-IC901NLDMOS射频集成器件和AFT05MS003N LDMOS晶体管。这两款产品的运行电压为3.6V或7.5V,主要适用于无线电传输范围的功耗和电池使用寿命的高效性为重要设计要求的应用。例如,移动无线电系统正在从模拟向数字化调制方案过渡,这通常需要无线电的重新设计。借助市场领先效率的飞思卡尔最新射频功率器件,陆地移动
Freescale Semiconductor has introduced a new broadband RF power amplifier - the new Airfast AF-IC901NLDMOS RF integrated device and AFT05MS003N LDMOS transistor. Operating at 3.6V or 7.5V, these two products are primarily intended for critical design requirements due to the power consumption in the radio transmission range and the efficiency of the battery life. For example, mobile radio systems are transitioning from analog to digital modulation schemes, which often require radio redesign. Land Mobile with the market-leading efficiency of Freescale’s latest RF power devices