We investigate the temperature dependence of radiation-induced attenuation (RIA) at 1 310 nm for a Ge/P co-doped fiber after a steady-state γ-ray irradiation.A γ irradiation facility 60Co source is used to irradiate the fiber at a dose rate of 0.5 Gy/min,satisfying a total dose of 100 Gy.The test temperature ranges from-40 to 60℃ by 20℃,and the RIA of the fiber is obtained using a power measuring device.The experimental result demonstrates that RIA exhibits a steady,monotonic,and remarkable temperature dependence after approximately 48h of accelerated annealing at 70℃.The optical fiber irradiated with a high dose and annealed sufficiently can be used as a temperature sensor. We investigate the temperature dependence of radiation-induced attenuation (RIA) at 1 310 nm for a Ge / P co-doped fiber after a steady-state γ-ray irradiation. A γ irradiation facility 60Co source is used to irradiate the fiber at a The rate of 0.5 Gy / min, satisfying a total dose of 100 Gy. The test temperature ranges from-40 to 60 ° C by 20 ° C, and the RIA of the fiber is obtained using a power measuring device. The experimental result demonstrates that RIA exhibits a steady, monotonic, and remarkable temperature dependence of approximately 48 h of accelerated annealing at 70 ° C. The optical fiber irradiated with a high dose and annealed sufficient can be used as a temperature sensor.