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对绝缘栅双极晶体管(IGBT)来说,最高开关频率主要是受制于总的开关能量的损耗。这在单晶体管和双晶体管结构的功率转换应用中尤其如此,因为在这种应用场合三
For insulated gate bipolar transistors (IGBTs), the highest switching frequency is mainly limited by the total switching energy loss. This is especially true in power conversion applications for single-transistor and two-transistor architectures because in such applications three