电力电子器件知识讲座(十六)MOSFET及IGBT栅极专用驱动电路(五)

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(上接第6期第60页)(4)应用电路图24至图26示出了M57959L、M57959AL、M57962L和M57962AL的应用电路。图中的栅极电阻RG的取值非常重要,适当数值的栅电阻能有效地抑制振荡、减缓开关开通时的di/dt、改善电流上冲波形、减小电压浪涌。从安全可靠性角度来说,应当取较大的RG;但是,RG影响开关速度、增加开关损耗。从提高工作频率角度,应当取较小的RG。一般情况下,可靠性是第一位的,因此使用 (Continued on page 6 of 60) (4) Application Circuit Figure 24 to Figure 26 shows the M57959L, M57959AL, M57962L and M57962AL application circuit. Figure RG value of the gate is very important, the appropriate value of the gate resistance can effectively suppress the oscillation, slowing down the opening of the di / dt, improve the current on the waveform, reduce the voltage surge. In terms of safety and reliability, larger RGs should be taken; however, RG affects the switching speed and increases the switching loss. From the perspective of improving the working frequency, a smaller RG should be taken. Under normal circumstances, the reliability is the first one, so use
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