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CuInSe_2化合物半导体的禁带宽度适中,是一种较理想的光电转换材料,有关它的研究已有报导.本文用电沉积法初步制得ρ-CuInSe_2薄膜,并观察到有光电效应.此法设备及工艺简单,具有发展前途. 用0.5cm~2钛片或镍片作基底.钛片在12ml HNO_3(比重1.4),3mlHF(40%),15ml蒸馏水组成的侵蚀液中在60—80℃下侵蚀4分钟;镍片在0.3NHNO_3中浸15分钟.皆用水洗净后待用. 将200ml所需浓度的InCl_3溶液分成两份,一份中加5滴NH_4OH和适量CuCI,另一份中
CuInSe_2 compound semiconductor has a moderate forbidden band width and is an ideal photoelectric conversion material, and studies on it have been reported.In this paper, the ρ-CuInSe_2 thin film was prepared by electrodeposition and a photoelectric effect was observed. And the process is simple, with the development of the future with 0.5cm ~ 2 titanium or nickel substrate for the titanium plate in 12ml HNO3 (specific gravity 1.4), 3mlHF (40%), 15ml of distilled water consisting of etching solution at 60-80 ℃ Erosion 4 minutes; Nickel pieces immersed in 0.3NHNO_3 for 15 minutes were washed with water stand-by. 200ml of the desired concentration of InCl_3 solution was divided into two, one plus 5 drops of NH_4OH and the amount of CuCI, the other in