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安森美半导体(ON Semiconductor)针对数据网络、电信和工业应用推出新的高能效单N沟道功率MOSFET系列,进一步扩大其宽广的产品阵容。这些器件能提供低得令人难以置信的导通电阻RDS(on)值,从而将导通损耗降至最低并提升整体工作能效水平。它们还有低至2164皮法(pF)的门极电容(Ciss),确保保持尽可能低的驱动损耗。安森美半导体新的NTMFS5C404NLT、NTMFS5C410NLT和NTMFS5C442NLT MOSFET额定击穿电压为40伏,最大导通电阻值(Vgs为10V时)分别为0.74mΩ、0.9mΩ和2.8mΩ,连续漏电流分别为352A、315A和127A。与这些器件相辅相成的NTMFS5C604NL、NTMFS5C612NL和NT-
ON Semiconductor has expanded its broad portfolio of products with new energy-efficient single N-channel power MOSFETs for data networking, telecommunications and industrial applications. These devices deliver an unbelievably low RDS (on) value of on-resistance, minimizing conduction losses and improving overall operational efficiency. They also have a gate capacitance (piss) down to 2164 picofarad (pF), ensuring the lowest possible drive loss. ON Semiconductor’s new NTMFS5C404NLT, NTMFS5C410NLT and NTMFS5C442NLT MOSFETs have a breakdown voltage rating of 40 V and a maximum on-state resistance (Vgs of 10 V) of 0.74 mΩ, 0.9 mΩ and 2.8 mΩ respectively. Continuous leakage currents are 352 A and 315 A, respectively 127A. Complementing these devices are the NTMFS5C604NL, NTMFS5C612NL, and NT-