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介绍了在无线应用中的两种 Si Ge器件工艺 :低压 IC电路和高压分立功率器件工艺。给出了器件的关键参数 ,并且讨论了这些参数对于诸如功放和射频前端电路的影响
Two SiGe device processes for wireless applications are introduced: low voltage IC circuits and high voltage discrete power device processes. The key parameters of the device are given, and the effect of these parameters on power amplifiers and RF front-end circuitry is discussed