论文部分内容阅读
为降低pn结反向电流可在器件制作工艺中采用一系列完美晶体器件工艺(PCDT).在实施过程中,作者对吸除工艺,应力补偿工艺等作了改进,进一步降低了反向电流.
In order to reduce the reverse current of pn junction, a series of perfect crystal device process (PCDT) can be used in the device fabrication process.In the process of implementation, the authors improved the gettering process, stress compensation process and so on, further reducing the reverse current.