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本文回顾了用于泵浦固态激光器的Ⅲ－Ｖ族半导体激光二极管材料的最新进展。所讨论的激光二极管材料均是在ＧａＡｓ衬底上生长的。其中重点讨论了激射波长在０．８７至１．１μｍ这一新波段的ＣＷ输出高功率的应变层ＩｎＧａＡｓ－ＡｌＧａＡｓ激光二极管的性能和可靠性；提高了抗退化能力的波长为０．７８至０．８７μｍ的应变层ＡｌＩｎＧａＡｓ－ＡｌＧａＡｓ和晶格匹配的ＧａＩｎＡｓＰ－ＧａＩｎＰ材料系统的激光二极管，以及改进了性能的ＧａＩｎＰ－ＡｌＧａＩｎＰ材料系统的可见光激光二极管．
This article reviews the recent advances in III-V semiconductor laser diode materials for pumping solid-state lasers. The laser diode materials discussed are all grown on GaAs substrates. Which focuses on the performance and reliability of high-power strained-layer InGaAs-AlGaAs laser diodes with CW output at a new wavelength band of 0.87 to 1.1 μm at lasing wavelengths; improved anti-degeneration capabilities at wavelengths of 0.78 to A 0.87 μιη strain layer AlInGaAs-AlGaAs and a lattice-matched GaInAsP-GaInP material system, and a visible-light laser diode of a GaInP-AlGaInP material system with improved properties.