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简要分析了ＩＧＢＴ器件的工作机理，制作了２０Ａ／１０５０Ｖ的ＩＧＢＴ芯片，给出了测试结果。对试制芯片进行了中子辐照实验，对比了辐照前后器件的关断特性。
A brief analysis of the working mechanism of IGBT devices, the production of 20A / 1050V IGBT chip, gives the test results. Neutron irradiation experiments were carried out on the prototype chips, and the turn-off characteristics of the devices before and after irradiation were compared.