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根据八带k.p理论,在三维InGaAs/GaAs量子点阵列中求解kx=ky=kz=0处的有效质量哈密顿H0的本征值,得到InGaAs量子点中导带中电子基态EC1,第一激发态EC2和重空穴态EHH1的能级.随着In组分从30%增加100%,InGaAs量子点中EC2到EC1的带内跃迁波长从18.50μm蓝移到11.87μm,而EC1到EHH1的跃迁波长则从1.04μm红移到1.73μm;随着量子点高度从1.0nm增加到5.0nm,In0.5Ga0.5As和InAs量子点中EC1到EC2的带内跃迁都从束缚态-连续态型转换到束缚态-束缚态型,对应于两种量子点的带内跃迁波长分别从8.12μm(5.90μm)红移到53.47μm(31.87μm),两种量子点中EC1到EHH1的跃迁波长分别从1.13μm(1.60μm)红移到1.27μm(2.01μm).
According to the eight band kp theory, the eigenvalues of the effective mass Hamiltonian H0 at kx = ky = kz = 0 are solved in a three-dimensional InGaAs / GaAs quantum dot array to obtain the electron ground state EC1 in the conduction band of the InGaAs quantum dot, State EC2 and the heavy-hole state EHH1. As the In composition increases from 30% to 100%, the in-band transition wavelengths of EC2 to EC1 in InGaAs quantum dots are blue shifted from 18.50 μm to blue of 11.87 μm, while those of EC1 to EHH1 The transition wavelength shifts from 1.04μm to 1.73μm. With the increase of the quantum dot height from 1.0nm to 5.0nm, the in-band transitions of EC1 to EC2 in In0.5Ga0.5As and InAs quantum dots change from bound state to continuous state Transition to the bound state - bound state, the corresponding transition wavelengths of the two kinds of quantum dots are respectively red-shifted from 8.12μm (5.90μm) to 53.47μm (31.87μm), the transition wavelengths of EC1 to EHH1 in the two kinds of quantum dots Red-shift from 1.13 μm (1.60 μm) to 1.27 μm (2.01 μm).