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本文研究了直拉型Si单晶中Cu和Fe杂质对氧沉淀行为的影响．尽管Si晶体中Cu杂质的浓度远高于Fe杂质，但发现Cu对氧沉淀行为没有影响，而Fe会明显增强氧的沉淀速率．实验结果表明Cu在Si中形成低密度、大尺寸的沉淀物团簇，与Si晶体生长后业已存在的微小氧沉淀物中的绝大多数没有相互作用；相反地，Fe杂质与微小氧沉淀物相互作用，形成高温下稳定的复合粒子，充当了氧沉淀的有效成核中心．
In this paper, the effect of Cu and Fe impurities on the oxygen precipitation behavior in Czochralski Si single crystal was investigated. Although the concentration of Cu impurity in Si crystal is much higher than that of Fe impurity, Cu is found to have no effect on the oxygen precipitation behavior, whereas Fe significantly enhances the oxygen precipitation rate. The experimental results show that Cu forms a low-density, large-size precipitate cluster in Si and does not interact with the vast majority of the existing micro-oxygen precipitates after the growth of Si crystals. Conversely, Fe impurities and micro-oxygen precipitates Interaction, the formation of high temperature stable composite particles, as the effective nucleation of oxygen precipitation.