Illustration All the data in this catalog are chosen from the Preliminary Seismological Report of Chinese Seismic Stations (Its abbreviation is Monthly Report).
The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO_2 resistive random access memory(RRAM) devices is propose
Vol.1 6.No1CONTENTSOases as Well as Their Sustainable Developmentand Constructions in China SHEN Yuan-cun etal(8)………………The Thresholds and the Pre-Warning