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研究了砷注入硅和砷通过SiO_2层注入硅的快速退火特性。给出了制备0.1—0.6μm的PN结最佳条件。用透射电子显微镜(TEM)观察了晶格损伤退火恢复过程,以及高密度缺陷演变过程,发现增加退火时间和靶加热注入均可大大降低注入层剩余缺陷密度。还研究了增强扩散效应,结果发现,随注入束流密度的增加,增强扩散系数明显增大。给出了As扩散系数与注入条件和退火条件的关系。进一步研究了注入及退火条件对PN结漏电流的影响。确定了如何将PN结建立在离子注入损伤区之外的条件。
The rapid annealing behavior of silicon implanted with arsenic and arsenic through silicon dioxide layer was studied. The best conditions for preparing PN junction of 0.1-0.6μm are given. Transmission electron microscopy (TEM) was used to observe the annealing process and the evolution process of high-density defects. It was found that both the annealing time and the target heating injection can greatly reduce the residual defect density of the implanted layer. The effect of enhanced diffusion was also studied, and it was found that as the injected beam density increased, the enhanced diffusion coefficient increased significantly. The relationship between As diffusivity and implantation conditions and annealing conditions is given. The effects of implantation and annealing conditions on PN junction leakage were further studied. The conditions of how to establish the PN junction beyond the ion implantation damage area were determined.