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据报道,夏普欧洲实验室科学家已用分子束外延生长世界首只蓝紫激光二极管。器件生长在蓝宝石基底上,是屋脊形波导InGaN多量子阱激光器,室温运转,输出波长为400nm。此有机金属汽相外延系统专为生长GaN器件设计。其主要优点是源材料消耗大为减少,特别是作为氮气源所需的氨。另一优点是,生长后不需要热退火,以激活P型掺杂物。该器件的阈值电流为1.5A,运转电压为33V,阈值电流密度约为30RA·cm~-2。当前为脉冲运转,脉宽200ns。
It is reported that Sharp European laboratory scientists have used molecular beam epitaxy to grow the world’s first blue-violet laser diode. The device, grown on a sapphire substrate, is a ridged waveguide InGaN multiple quantum well laser operating at room temperature with an output wavelength of 400 nm. This organometallic vapor phase epitaxy system is specifically designed for growing GaN devices. The main advantage is that the consumption of source material is greatly reduced, especially for the ammonia required as a nitrogen source. Another advantage is that no thermal annealing is required after growth to activate P-type dopants. The threshold current of this device is 1.5A, the operating voltage is 33V, and the threshold current density is about 30RA · cm ~ 2. The current pulse operation, pulse width 200ns.