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据《科技开发动态》2003年第1期报导,该制备工艺包括前处理一形成等离子体球调整压力—生长金刚石膜—后处理等过程。该工艺先将硅片表面在金刚石纳米粉溶液中磨研;之后在H_2气氛中启动微波形成等离子球,再按顺序调整CH_4与H_2比例、微波功率、气压和温度;最后在低气压下生长金刚石膜;后处理是在硅衬底上加负偏压,保温再缓慢降温。经上述过程制得的金刚石膜大面积均匀,品质好,消除了内应力,完垒适合予硅片键合技术要求。
According to “Science and Technology Development,” No. 1, 2003 reported that the preparation process includes the formation of a plasma ball to adjust the pressure - growth of diamond film - post-processing process. The process first grinds the surface of the silicon wafer in a diamond nanopowder solution; afterwards, a microwave plasma is activated in a H 2 atmosphere to adjust the CH 4 and H 2 ratio, the microwave power, the atmospheric pressure and the temperature in sequence; and finally, the diamond is grown under a low pressure Film; post-processing is to add a negative bias on the silicon substrate, then slowly cool the insulation. The diamond film obtained by the above process has the advantages of large uniform area, good quality, elimination of internal stress, and perfect barrier to silicon wafer bonding technology.