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Sol-Gel法制备KTN多晶粉末,在富氧气氛下烧结富钾KTN陶瓷,代替KTN 单晶作为靶材,用PLD技术在透明石英单晶(100)基片上制备高取向透明KTN薄膜.受石英单晶热应力限制,沉积对基片温度为300℃,远低于在P-Si(100)制备时的基片温度560℃.XRD 分析表明,所制薄膜为非晶态,通过提高脉冲激光能量密度结合后期退火的方法使非晶态薄膜转化为晶态,最佳激光能量密度和退火温度分别为2.0J/cm2和600℃.探讨了PLD技术在低衬底温度下成膜的机理,分析退火温度对薄膜钙矿相形成和晶粒取向的影响,给出透明石英单晶(100)基片上制备高取向KTN薄膜的最佳工艺.
KTN polycrystalline powder was prepared by Sol-Gel method and potassium-rich KTN ceramic was sintered in an oxygen-enriched atmosphere instead of KTN single crystal as a target, a highly oriented transparent KTN thin film was prepared on a transparent quartz single crystal (100) substrate by PLD technology. Quartz single crystal thermal stress limit deposition temperature of 300 ℃ substrate, well below the P-Si (100) substrate temperature 560 ℃ XRD analysis showed that the film is amorphous, by increasing the pulse The laser energy density combined with the post-annealing method transformed the amorphous film into a crystalline state with the optimum laser energy density and annealing temperature of 2.0 J / cm 2 and 600 ° C. The mechanism of PLD film formation at low substrate temperature , The influence of annealing temperature on the formation of Ca2 + and the orientation of the grains were analyzed. The best process for preparing high orientation KTN film on the transparent quartz single crystal (100) substrate was given.