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分别采用９９．９９％的多晶铜片和９９．９５％的磷脱氧铜片作为沉积金刚石薄膜的基片，通过热丝化学汽相沉积法在两种基片上都获得了大面积、自支撑的多晶金刚石膜．使用高分辨率光学显微镜、扫描电子显微镜、Ｒａｍａｎ光谱和Ｘ射线衍射比较分析了两种铜基片上的金刚石膜．脱氧铜上的金刚石膜质量并不亚于多晶铜上的金刚石膜，而且它的成核密度、生长速率以及应力都高于多晶铜上金刚石膜的同类参数．特别采用了退火工艺和优化的生长条件来获得大面积的连续金刚石膜
Using 99.99% polycrystalline copper and 99.95% phosphorus deoxidized copper respectively as the substrates for depositing diamond films, the large area, self-supporting Polycrystalline diamond film. The diamond films on the two copper substrates were compared using high-resolution optical microscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction. The quality of the diamond film on the deoxidized copper is not inferior to that on the polycrystalline copper, and its nucleation density, growth rate and stress are all higher than the same parameters of the diamond film on the polycrystalline copper. In particular, the use of annealing process and optimized growth conditions to obtain a large area of continuous diamond film