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采用固相反应法合成具有焦绿石立方结构的Bi1.5Zn1.0Nb1.5O7(BZN)陶瓷靶材,采用脉冲激光沉积法在Pt/TiO2/SiO2/Si(100)基片制备立方BZN薄膜,衬底温度在500~700℃范围内变化。X射线衍射测量结果表明:当在500℃沉积BZN薄膜时,薄膜呈现出无定形态结构。随着衬底温度增加到550℃,薄膜开始晶化,并且显示出立方焦绿石结构。X射线光电子能谱也被用来研究BZN薄膜的结构状态和元素价态。测试得到的全谱表明:在BZN薄膜中,除了用于定标的C元素之外,只有Bi、Zn、Nb、O元素的特征峰,此外有Ti2p特征峰出现,可能来自底电极的TiO2缓冲层。各元素的窄谱扫描表明:Bi,Zn,Nb,O四种元素的化学价态分别是+3,+2,+5,-2。BZN薄膜在550℃结晶,随着衬底温度升高到600℃,金属阳离子的结合能的峰位向高能方向移动,然而O1s的特征峰位也向高能方向移动,这归因于薄膜中存在的氧空位。
A Bi1.5Zn1.0Nb1.5O7 (BZN) ceramic target with a pyrochlore cubic structure was synthesized by a solid-state reaction method. A cubic BZN film was prepared on a Pt / TiO2 / SiO2 / Si (100) substrate by pulsed laser deposition. The temperature changes in the range of 500 ~ 700 ℃. X-ray diffraction measurement results show that: when deposited at 500 ℃ BZN film, the film showed amorphous state structure. As the substrate temperature increased to 550 ° C, the film started to crystallize and showed cubic pyrochlore structure. X-ray photoelectron spectroscopy was also used to study the structural state and elemental valence of BZN films. The full spectrum obtained from the test shows that there are only characteristic peaks of Bi, Zn, Nb and O elements in addition to the C elements used for calibration in the BZN thin film. In addition, characteristic peaks of Ti2p appear, possibly from the TiO2 buffer of the bottom electrode Floor. Narrow spectral scanning of the elements showed that the chemical valances of the four elements of Bi, Zn, Nb and O were +3, +2, +5, -2, respectively. The BZN thin film crystallizes at 550 ° C. As the substrate temperature increases to 600 ° C, the peak position of the binding energy of the metal cation moves in the high energy direction. However, the characteristic peak of O1s also moves in the high energy direction due to the presence of the thin film Oxygen vacancies.