Luminescent tetrakis(phenyl)porphyrin car- bonyl ruthenium (Ⅱ) (RuTPPCO) complex was employed as a doped emitting material to fabricate red organic electrolu- minescent (EL) devices. The EL device structure was [ITO/copper phthalocyanine (Cu-Pc) (15.0 nm)/N,N -di(α- naphthyl)-N,N -diphenyl-(1,1 -biphenyl)-4, 4 -diamine (NPB) (60.0 nm)/tris(8-hydroxyquinolinato)aluminum (Alq3): RuTPPCO (50.0 nm)/LiF (1.0 nm)/Al (200.0 nm)]. The co- deposited films of Alq3:RuTPPCO were utilized as the emit- ting layer to construct EL devices. Experimental results showed that energy transfer from Alq3 to RuTPPCO oc- curred in the codeposited films. The EL property of the co- deposited Alq3:RuTPPCO films with different RuTPPCO concentrations was described. For the EL device with the RuTPPCO concentration of 15% by weight, deep red elec- troluminescence at 656 nm with the maximum EL efficiency of 0.32 cd/A was achieved. Luminescent tetrakis (phenyl) porphyrin car bonyl ruthenium (II) (RuTPPCO) complex was employed as a doped emitting material to fabricate red organic electroluminescent (EL) devices. The EL device structure was [ITO / copper phthalocyanine (15.0 nm) / N, N -diphenyl- (1,1 -biphenyl) -4,4-diamine (NPB) (60.0 nm) / tris (8-hydroxyquinolinato) The results are shown in the following. Alq3: RuTPPCO (50.0 nm) / LiF (1.0 nm) / Al energy transfer from Alq3 to RuTPPCO oc-curred in the codeposited films. The EL property of the co-deposited Alq3: RuTPPCO films with different RuTPPCO concentrations was described. For the EL device with the RuTPPCO concentration of 15% by weight, deep red elec - troluminescence at 656 nm with the maximum EL efficiency of 0.32 cd / A was achieved.