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本文研究高能氩离子注入硅单晶片背面,对单晶片正面有源区里的重金属杂质等的吸杂效果.吸杂作用以少数载流子寿命的提高来衡量.结果表明,Ar~+的优化吸杂剂量在 7.5 ×10~(14)cm~(-2)及 7.5 ×10~(15)cm~(-2)左右.文中最后论及吸杂效果和剩余缺陷密度的关系.
In this paper, the effect of high-energy argon ion implantation on the back surface of silicon single-crystal wafers is studied, which has the effect of reducing the heavy metal impurities in the front active area of single-crystal wafers.The absorption effect is measured by the increase of minority carrier lifetime. The amount of entrained impurity is about 7.5 × 10 ~ (14) cm ~ (-2) and about 7.5 × 10 ~ (15) cm ~ (-2) .Finally, the relationship between the gettering effect and the residual defect density is discussed.