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本文介绍了光束诱导电流法(OBIC)及其在高压平面结方面的应用。对有圆柱形边界的p~+n二极管进行了测量。测量结果说明了在表面有正、负电荷存在时OBIC信号的响应。 本文指出,虽然多层场环结构在一般情况下难以优化,但通过把OBIC测量与Briger模型相结合,可使其得到改善。在掺杂浓度为9×10~(13)/cm~3的n型衬底上,做优化了的四个场环结构,其耐压可达1550V。 在反偏的平面结中,最大载流子倍增点在其表面下几个微米处(视结深而定)。我们利用OBIC信号与波长的依赖关系发现,具有束深为20μm的横向可变掺杂结构的击穿在表面下5～10μm之间。
This paper introduces the beam induced current method (OBIC) and its application in high voltage planar junction. P ~ + n diodes with cylindrical boundaries were measured. The measurement results show the response of the OBIC signal in the presence of positive and negative charges on the surface. This paper points out that although multi-layer field ring structures are difficult to optimize in general, they can be improved by combining OBIC measurements with the Briger model. On the n-type substrate with a doping concentration of 9 × 10 ~ (13) / cm ~ 3, the optimized four field-ring structures can be fabricated with a withstand voltage of up to 1550V. In a reverse-biased planar junction, the maximum carrier-doubling point is a few microns below its surface, depending on the junction depth. Using the dependence of the wavelength of the OBIC signal, we found that the breakdown of the laterally-variable doped structure with a beam depth of 20 μm is between 5 and 10 μm below the surface.