For SiGe-on-insulator fabrication, a l00nm SiGe tilm with uniform germanium composition was grown on a Si(l00) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45kev and a dose of 3 × 1017 cm-2, and annealed for five hours at 1250°C in flowing (Ar + 5% 02) atmosphere with a l00nm oxide protective layer. The result indicates that a buried oxide layer was successfully formed at the interface of SiGe and Si on the substrate. Furthermore,hydrogen was implanted into SiGe at the energy of 62keV and the dose of 6 × 1016 cm-2 to perform a blistering study, which confirmed the feasibility of H-induced layer splitting in SiGe layer.