论文部分内容阅读
应变硅技术是一种被称为延续摩尔定律的技术,是集成微电子技术的热点之一。本文以锗硅缓冲双轴应变硅材料(ε-Si/Ge_(0.3)Si_(0.7)/Ge_xSi_(1-x)/C-Si)为研究对象,采用显微拉曼光谱技术,开展了该多层半导体异质结构内部残余应力的实验力学分析。这是面向多层结构残余应力与表/界面力学行为的多尺度实验力学分析,本文首先简述了该应变硅的制造工艺和超低粗糙度横截面样品的加工方法,并推导了针对锗硅合金拉曼-力学测量修正关系,进而对应变硅样品的表面和横截面进行了显微拉曼力学测量实验,给出了多层异质结构内部的残余应力分布,并以此为基础讨论了多层界面的力学行为。
Strain silicon technology is a technique known as the continuation of Moore’s Law and is one of the hot spots in integrated microelectronics. In this paper, the biaxially-strained biaxially-strained SiGe material (ε-Si / Ge_ (0.3) Si_ (0.7) / Ge_xSi_ (1-x)) / C-Si was investigated by using micro Raman spectroscopy. Experimental Mechanics Analysis of Internal Residual Stresses in Multilayer Semiconductor Heterostructure. This is a multi-scale experimental mechanics analysis of multi-layer structure residual stress and surface / interface mechanical behavior. This paper first briefly describes the manufacturing process of the strained silicon and the processing method of ultra-low roughness cross-section samples. Raman - mechanical measurement of the relationship between the correction, and then the surface of the sample and cross-section of the silicon microstructure Raman mechanical measurement experiments, given the multi-layer heterostructure residual stress distribution, and based on that Mechanical Behavior of Multilayer Interfaces.