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已研制出一种高性能５μｍ６４０×４８０蓝宝石衬底的ＨｇＣｄＴｅ／ＣｄＴｅ／Ａｌ＿２Ｏ＿３红外焦平面阵列（ＦＰＡ），在低于１２０Ｋ温度下，它有全电视兼容分辨率和优良的灵敏度．在９５Ｋ工作温度和１０￣（１４）光子数ｃｍ￣（－２）Ｓ￣（－１）的背景通量下，平均焦平面阵列Ｄ￣＊受背景限制，其值约为１×１０￣（１２）ｃｍＨｚ￣（１／２）Ｗ￣（－１），典型的平均量子效率为６０％～７０％。制造这种大面阵、高灵敏度器件的关键工艺，是在有稳定的ＣｄＴｅ缓冲层的蓝宝石衬底上，外延生长ＨｇＣｄＴｅ材料。在低于或等于１２０Ｋ的工作温度和３．４～４．２μｍ的波段内，相机的平均噪声等效温差ＮＥ△Ｔ为０．０１３Ｋ；该值比目前可实用的ＰｔＳｉ焦平面阵列相机的高一个数量级，而ＰｔＳｉ焦平阵列相机要求制冷到低于或等于７７Ｋ，才能保持其性能。
A HgCdTe / CdTe / Al_2O_3 infrared focal plane array (FPA) has been developed for high performance 5μm 640 × 480 sapphire substrates with full TV-compatible resolution and excellent sensitivity at temperatures below 120K. At a background temperature of 95K and a background flux of 10 ~ (14) photons cm ~ (-2) S ~ (-1), the average focal plane array D * * has a background limit of about 1 × 10 ~ 12) cmHz ~ (1/2) W ~ (-1), the typical average quantum efficiency is 60% ~ 70%. The key process for fabricating such a large area array, high sensitivity device is the epitaxial growth of HgCdTe material on a sapphire substrate with a stable CdTe buffer layer. The average noise equivalent temperature difference ΔT ΔT of the camera is 0.013K at a working temperature lower than or equal to 120K and in a wavelength range of 3.4 to 4.2μm; this value is higher than that of currently available PtSi focal plane array cameras An order of magnitude, while PtSi focal plane array cameras require cooling to below or equal to 77K in order to maintain their performance.