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场效应晶体管正在迅速地成为低噪声放大器(特别在 C 波段以上)的“首席候选者”。本文介绍4～8千兆赫6分贝增益平衡放大器的设计。
Field effect transistors are rapidly becoming “prime candidates” for low-noise amplifiers, especially above the C band. This article describes the design of a 4 to 8 GHz 6 dB gain balanced amplifier.