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采用真空热蒸发法在ITO阳极与空穴传输层TPD之间插入VOx空穴注入层,使典型结构(ITO/TPD/Alq3/LiF/Al)的有机发光二极管(OLED)的发光性能明显改善。当插入VOx空穴注入层后,器件的启亮电压比没有插入VOx时的器件下降了2 V。当插入20 nm的VOx空穴注入层后,器件的驱动电压在亮度为100 cd/m2或1 000 cd/m2时均下降了3.5 V;器件的最大亮度从5808 cd/m2(14.5 V)上升至9234 cd/m2(11.5 V);器件的最大功率效率从0.88 lm/W增加到2.63 lm/W。此外,对VOx厚度分别为10,20和30 nm的三组器件进行了对比,结果显示器件性能基本一致。
The VOx hole injection layer was inserted between the ITO anode and the hole transport layer TPD by vacuum thermal evaporation. The light emitting performance of the OLED (organic light emitting diode) with typical structure (ITO / TPD / Alq3 / LiF / Al) was remarkably improved. When the VOx hole injection layer was inserted, the turn-on voltage of the device dropped by 2 V over that of the device without the VOx inserted. When the VOx hole injecting layer at 20 nm was inserted, the device’s driving voltage dropped 3.5 V at 100 cd / m2 or 1000 cd / m2; the maximum brightness of the device increased from 5808 cd / m2 (14.5 V) To 9234 cd / m2 (11.5 V); the maximum power efficiency of the device increased from 0.88 lm / W to 2.63 lm / W. In addition, three groups of devices with VOx thicknesses of 10, 20 and 30 nm respectively were compared, and the results show that the device performance is basically the same.