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利用MBE外延材料和接触式光学光刻方式,成功制备出1.0μm栅长GaAs基MHEMT器件,分别蒸发Pt/Ti/Pt/Au和Ti/Pt/Au作为栅电极金属.获得了优越的DC和RF性能,Pt/Ti/Pt/Au和Ti/Pt/Au MHEMT器件的gm为502(503)mS/mm,JDSS为382(530)mA/mm,VT为0.1(-0.5)V,fT和fmax分别为13.4(14.8),17.0(17.5)GHz.利用单片集成增强/耗尽型GaAs基MHEMT器件制备出九阶环型振荡器,直流电压为1.2V时,振荡频率达到777.6MHz,门延迟时间为71.4ps.利用Ti/Pt/Au MHEMT器件设计并制备出了DC-10GHz单刀双掷(SPDT)开关MMIC,其插入损耗、隔离度、输入输出回波损耗分别优于2.93,23.34和20dB.
A 1.0μm gate-length GaAs-based MHEMT device was successfully fabricated by MBE epitaxy and contact photolithography, respectively, and Pt / Ti / Pt / Au and Ti / Pt / Au were evaporated as gate electrode metals respectively. RF performance, the gm for the Pt / Ti / Pt / Au and Ti / Pt / Au MHEMT devices was 502 (503) mS / mm, JDSS was 382 (530) mA / mm, VT was 0.1 (-0.5) V, fmax were 13.4 (14.8) and 17.0 (17.5) GHz, respectively.The ninth-order ring oscillator was fabricated by using a monolithic integrated enhancement / depletion GaAs-based MHEMT device with an oscillation frequency of 777.6 MHz at a DC voltage of 1.2V, The delay time is 71.4ps. The DC-10GHz single pole double throw (SPDT) switch MMIC is designed and fabricated with Ti / Pt / Au MHEMT device. Its insertion loss, isolation and input / output return loss are better than 2.93, 23.34 and 20dB.