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使用加速器对量子阱半导体激光器进行了总通量1×10~(16)cm~(-2)的电子辐照实验.辐射实验结果表明,在辐射环境下激光器的输出功率下降、阈值电流增加.从理论上分析了位移效应对量子阱激光器的影响,并推导了电子通量与相对阈值电流变化、相对输出功率变化的函数关系式.该公式的计算结果与实验测试结果符合很好,有效地反映了电子辐照环境下激光器的性能变化趋势.该公式可用于预测激光器在辐射环境下的性能变化,有着较大实际应用价值.
The electron beam experiments of 1 × 10 ~ (16) cm ~ (-2) total fluxes were performed on the quantum well semiconductor laser using an accelerator.The experimental results show that the output power of the laser decreases and the threshold current increases under the radiation environment. The effect of the displacement effect on the quantum well laser is theoretically analyzed and the functional relationship between the electron flux and the relative threshold current and relative output power is deduced.The calculation results of the formula are in good agreement with the experimental results Which reflects the trend of the performance of the laser under the environment of electron irradiation.The formula can be used to predict the performance change of the laser under the radiation environment and has great practical value.