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一、引言硅热氧化层错是在硅器件热氧化工艺中产生的一种二次缺陷,它是由1/3[111]Frank不全位错环围绕的非本征填隙型层错。由于它对硅器件质量有显著影响,因而引起了器件工作者和材料工作者的普遍重视。已用各种技术对硅热氧化层错的结构形貌进行了研究,先后提出了各式各样的层错核化,生长模型,积累了许多层错生长动力学数据。但是,迄今还没有一个模型能成功地定量描写硅的热氧化层错的生长规律。1974年S·M·Hu给出了层错生长长度与氧化时间的解析式,预示了层错长度的抛物
I. INTRODUCTION Silicon thermal oxide layer faults are a kind of secondary defect in the thermal oxidation process of silicon devices. They are extrinsic interstitial faults surrounded by 1/3 [111] Frank incomplete dislocation loops. Because it has a significant impact on the quality of silicon devices, it has attracted the widespread attention of device workers and material workers. A variety of techniques have been used to investigate the thermal morphologies of silicon thermal oxide faults. A variety of layer-fault-nucleation and growth models have been proposed one after another, and many accumulated fault growth kinetic data have been accumulated. However, until now, no single model has succeeded in quantitatively describing the growth pattern of silicon thermal oxide faults. In 1974, S M. Hu gave an analytical formula for the growth length and oxidation time of strata fault, predicts the parabola