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在640—960℃温度范围内研究了放射性铊和钽在结晶粒结构的氧化亚铜晶体中的扩散。结果指出,它们分别满足下列关系式:D_(Tl)=2.29×10(-2)e~(-37000/(RT))+7.73×10~(-9)e~(-6100/(RT))厘米~2/秒;D_(Ta)=8.95e~(-49500/(RT))+1.85×10~(-8)e~(-7200/(RT))厘米~2/秒。logD～1/T图线在760±10℃有一转折点,在这个温度以上和以下由曲线斜率求出的激活能是不同的。根据实验结果可以认为,在760℃以下,杂质原子主要是沿着晶粒间界发生扩散的,而在760℃以上是沿着单晶体的空位式扩散机构。并且认为空位式的扩散机构是舆空格点本身的位移相伴随着。放射性钽在氧化过程中的浓度分布指出:在760℃以下,在氧化过程中,氧和铜的相对扩散佔同等重要地位;而在760℃以上,随着温度的升高,铜的扩散逐渐佔优势,在继续氧化过程中,由於氧的扩散生成的氧化层逐渐减少。
The diffusion of radioactive thallium and tantalum in cuprous oxide crystals of crystalline grain structure was studied at a temperature in the range of 640-960 ° C. The results indicate that they respectively satisfy the following relation: D_ (Tl) = 2.29 × 10 (-2) e ~ (-37000 / (RT)) + 7.73 × 10 ~ (-9) e ~ (-6100 / (RT) (Ta) = 8.95e ~ (-49500 / (RT)) + 1.85 × 10 ~ (-8) e ~ (-7200 / (RT)) cm ~ 2 / s. The logD ~ 1 / T plot has a turning point at 760 ± 10 ° C. The activation energies calculated from the slope of the plot above and below this temperature are different. According to the experimental results, it is considered that impurity atoms mainly diffuse along the grain boundaries below 760 ° C, and that vacancies diffuse along the single crystal at temperatures above 760 ° C. And that space-based diffusion mechanism is the displacement of the grid point itself accompanied by. The concentration distribution of radioactive tantalum during oxidation states that the relative diffusion of oxygen and copper is equally important under the temperature of 760 ° C, while the diffusion of copper gradually increases as the temperature rises above 760 ° C Advantages, in the continuing oxidation process, due to the diffusion of oxygen generated oxide layer gradually reduced.