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采用Aixtron 2600G3MOCVD设备外延生长了GaAs/GaInP材料,并结合金相显微镜、X射线衍射仪以及二次离子质谱仪系统地研究了掺杂源Te对GaInP外延层材料特性的影响。实验发现,Te会破坏GaInP外延层的表面形貌,在GaInP表面形成丘状结构及线条,且该丘状结构的尺寸随着GaInP厚度的增加而逐渐增大。在掺杂浓度较高时,Te会破坏GaInP的晶格,造成晶格膨胀。GaInP中Te的并入效率随着厚度的增加而增加,且掺杂浓度越高就越快趋于平稳。此外,Te在As化物中的并入效率大于在P化物中的并入效率。
GaAs / GaInP materials were epitaxially grown by Aixtron 2600G3MOCVD. The effect of doping Te on the properties of GaInP epitaxial layers was studied systematically by means of metallographic microscope, X-ray diffraction and secondary ion mass spectrometry. It is found that Te destroys the surface morphology of the GaInP epitaxial layer and forms mound-like structures and lines on the GaInP surface, and the size of the mound-shaped structure gradually increases as the GaInP thickness increases. At higher dopant concentrations, Te destroys the GaInP lattice and causes lattice expansion. The incorporation efficiency of Te in GaInP increases with the increase of thickness, and the faster the doping concentration, the faster the stabilization of Te. In addition, the incorporation efficiency of Te in As is greater than the efficiency of incorporation in P.