本文通过化学气相沉积方法成功制备了秧苗状Zn2SnO4纳米线,X射线衍射表明,样品为面心立方结构的Zn2SnO4,同时含有少量的ZnO物相,并且可以通过延长沉积时间的方法获得较为纯净的Zn2SnO4材料。SEM结果显示样品形貌为秧苗状的纳米线。通过样品的光致发光谱的研究发现,Zn2SnO4的紫外发光强度随着ZnO杂相的减少逐渐增强。 In this paper, the seed-like Zn2SnO4 nanowires were successfully prepared by chemical vapor deposition. The X-ray diffraction showed that the samples were face-centered cubic Zn2SnO4 with a small amount of ZnO phases and the pure Zn2SnO4 could be obtained by prolonging the deposition time material. SEM results showed that the morphology of the sample was seedling-like nanowires. According to the photoluminescence spectra of the samples, it was found that the UV emission intensity of Zn2SnO4 increased with the decrease of ZnO heterogeneous phase.