A systematic study of the two-dimensional electron gas at LaAlO3/SrTiO3(110) interface reveals an anisotropy alongtwo specific directions, [001] and ?1ˉ10?. Th
The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories (MRAMs) with 0.13 μm and 0.18-μm complementary metal-oxide-semiconductor (CMOS) pr
The electronic properties of TiO2-terminated BaTiO3 (001) surface subjected to biaxial strain have been studied using first-principles calculations based on den