Gallium nitride offers very substantial advantages over silicon in power switching applications, offering higher operating voltage, switching current and operating temperature.Devices can now be made with on-resistances two orders of magnitude superior to silicon, and exceptionally low drive capacitance, resulting in conversion efficiencies approaching 99%.GaN Systems devices in particular offer exceptional switching performance due to their unique island topology.This presentation will describe the innovations introduced in these devices to overcome the challenges of GaN introduction, and their particular relevance to automotive applications.A roadmap will be presented indicating when automotive engineers can expect the devices with the performance and reliability they need.