Self-limiting deposition of aluminum oxide (Al2O3) thin films were accomplished by the plasma-enhanced chemical vapor deposition using tfimethyl aluminum (TMA) and O2 as precursor and oxidant,respectively,where argon was kept flowing in whole deposition process as discharging and purge gas.In here we present a novel plasma source for the atomic layer deposition technology:magnetic enhanced radio frequency (RF) plasma.Difference from the commercial RF source,the magnetic field was amounted over the RF electrode,and the influence of the magnetic field strength on the deposition rate and morphology were investigated in detail.R concludes that a more than 20 (A)/purging cycle deposition rate and the good quality of ALD Al2O3 were achieved in this plasma source even without extra heating.The ultra-thickness films were characterized by including Fourier transform infrared (FTIR) spectroscopy,X-ray photoelectric spectroscopy (XPS),scanning electron microscopy (SEM),and atomic force microscopy (AFM).The high deposition rates obtained at ambient temperatures were mechanismly analyzed after in-situ the diagnostic of plasmas by Langmuir probe.