【摘 要】
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In this paper, Al2O3 doped ZnO linear resistor was prepared by high energy ball milling.Its microstructure and crystal phases have been investigated by SEM,
【出 处】
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2012 Postdoctoral Symposium of China on Materials Science &a
论文部分内容阅读
In this paper, Al2O3 doped ZnO linear resistor was prepared by high energy ball milling.Its microstructure and crystal phases have been investigated by SEM,and XRD.And the electrical properties of the linear resistor can be influenced by contents of Al2O3 and its sintering temperature.The results showed that the main phase of Al2O3 doped ZnO Linear resistor is Zn2Si04, and a second phase of ZnO is generated.When the sintering temperature is 1350 ℃ and the molar fraction of Al2O3 is 3.5%, we get the Nonlinear coefficient of 1.0 which is the best performance of linear resistance.The dielectric constant of ZnO linear resistor is not influenced so clearly by the chenging contents of the doped Al2O3, but suffered significant impact by the sintering temperature.
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