The theoretical and experimental study on 4H-SiC Schottky betavoltaic battery was presented in this paper,and it provides the possibility for the power supply of micro/nano devices.For 4H-SiC,the wide band-gap provides low saturation current thus high open circuit voltage (Voc),and the radiation hardness increases the endurance of the device.Ni63 is chosen as the soft-β radiation source due to its long half-life (100 years) and low injuries for semiconductor or humans.A n+ 4H-SiC substrate doped at 1 × 101e cm-3 purchased from Cree Inc was used in this study.After the epitaxial growth of a 2 μm thick active n-layer with a doping concentration of 6 × 1014 cm-3,backside contact consisting of Ni/Cr/Au was evaporated and annealed at 1000℃ to render them ohmic,Ni was used as Schottky barrier metal and Au,with Cr as the adhesion layer,was evaporated to facilitate probe test and wire bonding.Pattern transfer of the Schottky electrode was performed using lift-off and the Schottky electrode thus has been formed a circular geometry with a radius of 661 μm.