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Characterization of Radiation Damage Induced by Low-Temperature BGe Molecular Ion Implantation in Si
【机 构】
：
Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 300, Taiwan, R.
【出 处】
：
The 17th International Conference on Surface Modification of
【发表日期】
：
2011年3期
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