【摘 要】
：
The (GeTe)1-x(Ag8GeTe6)x alloy with x =0.02,0.05,0.08 and 0.11 were prepared by melting in the vacuum,powdering and spark plasma sintering techniques and in
【机 构】
：
深圳大学材料学院,深圳市特种功能材料重点实验室,深圳,518060
【出 处】
：
第十六届全国相图学术会议暨相图与材料设计国际研讨会
论文部分内容阅读
The (GeTe)1-x(Ag8GeTe6)x alloy with x =0.02,0.05,0.08 and 0.11 were prepared by melting in the vacuum,powdering and spark plasma sintering techniques and investigated their electrical resistivities,Seebeck coefficients and thermal conductivities.The experimental results show that all samples consist of the solid solution GeTe and minor secondary phase Ag8GeTe6,and have p-type semiconductor feature.The existence of Ag8GeTe6 compound in GeTe phase decreases its electrical resistivity and Seebeck coefficient slightly,but reduces the thermal conductivity significantly.As a result,the figure of merit for the materials can be enhanced.The best value of 1.14 was obtained in the sample (GeTe)0.89(Ag8GeTe6)0.11 at 673K.
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