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In order to prepare polycrystalline silicon thin films,the effect of temperature on preparing polycrystalline silicon thin films were studied.The a-Si:H thin films were deposited by PECVD and then were annealed by RTA.The microstructure of thin films was investigated by XRD and Raman.The effect of temperature was studied.The result shown that,a-Si:H thin films deposited at 300℃ were easier to be crystallized than those deposited at 100℃,the higher annealing temperature was and the smaller the cooling velocity rates was,the more the nuclei formed.